NTE311 Details_NTE311 Related parameters PDF

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：836(Ref. price)

Qty.	Unit Price	Ext. Price
1	$6.33080	$6.33080

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	800MHz
Noise Figure (dB Typ @ f)	-
Gain	10dB
Power - Max	5W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 50mA, 5V
Current - Collector (Ic) (Max)	400mA
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39

Other

Price advantage, NTE311 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
BFR340FH6327	Infineon Technologies	Transistors - Bipolar - RF	Datasheet	LOW-NOISE TRANSISTOR	$0.06930	In Stock:198722
NE85639R-T1-A	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 12V 9GHZ SOT143R	No price	In Stock:17706
MS1336	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 18V 175MHZ M135	No price	In Stock:17710
2SC5086-Y,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 12V 7GHZ SSM	No price	In Stock:17716
NE68830-T1-A	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 6V 4.5GHZ SOT323	No price	In Stock:17718