BFG505,215 Details_BFG505,215 Related parameters PDF

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	9GHz
Noise Figure (dB Typ @ f)	1.2dB ~ 2.1dB @ 900MHz
Gain	-
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 6V
Current - Collector (Ic) (Max)	18mA
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-253-4, TO-253AA
Supplier Device Package	SOT-143B

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