BFG10W/X,115 Details_BFG10W/X,115 Related parameters PDF

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	1.9GHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	400mW
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 50mA, 5V
Current - Collector (Ic) (Max)	250mA
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-343 Reverse Pinning
Supplier Device Package	4-SO

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