S200-50 Details_S200-50 Related parameters PDF

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	110V
Frequency - Transition	1.5MHz ~ 30MHz
Noise Figure (dB Typ @ f)	-
Gain	12dB ~ 14.5dB
Power - Max	320W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 1A, 5V
Current - Collector (Ic) (Max)	30A
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	55HX
Supplier Device Package	55HX

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