NESG3031M14-T3-A Details_NESG3031M14-T3-A Related parameters PDF

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.3V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz
Gain	7.5dB ~ 16dB
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	220 @ 6mA, 2V
Current - Collector (Ic) (Max)	35mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	4-SMD, Flat Leads
Supplier Device Package	4L2MM, M14

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