MRF581G Details_MRF581G Related parameters PDF

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	18V
Frequency - Transition	5GHz
Noise Figure (dB Typ @ f)	3dB ~ 3.5dB @ 500MHz
Gain	13dB ~ 15.5dB
Power - Max	1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 50mA, 5V
Current - Collector (Ic) (Max)	200mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Micro-X ceramic (84C)
Supplier Device Package	Micro-X ceramic (84C)

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