AT-42010 Details_AT-42010 Related parameters PDF

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	1.9dB ~ 3dB @ 2GHz ~ 4GHz
Gain	10dB ~ 13.5dB
Power - Max	600mW
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 35mA, 8V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	200°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD (100 mil)
Supplier Device Package	-

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