NTE65 Details_NTE65 Related parameters PDF

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	5GHz
Noise Figure (dB Typ @ f)	2.4dB ~ 3dB @ 500MHz ~ 1GHz
Gain	18dB
Power - Max	180mW
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 14mA, 10V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Lead
Supplier Device Package	3-SMD

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