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Transistors - Bipolar - RF
2003 Picture

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2003

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Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
50V
Frequency - Transition
2GHz
Noise Figure (dB Typ @ f)
-
Gain
8.5dB
Power - Max
12W
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 100mA, 5V
Current - Collector (Ic) (Max)
500mA
Operating Temperature
200°C (TJ)
Mounting Type
Chassis Mount
Package / Case
55BT-1
Supplier Device Package
55BT-1
Other
Price advantage, 2003 is available in stock and can be delivered on the same day
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