BD809G Details_BD809G Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	10 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Vce Saturation (Max) @ Ib, Ic	1.1V @ 300mA, 3A
Current - Collector Cutoff (Max)	1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 4A, 2V
Power - Max	90 W
Frequency - Transition	1.5MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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