KSE5020S Details_KSE5020S Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	3 A
Voltage - Collector Emitter Breakdown (Max)	500 V
Vce Saturation (Max) @ Ib, Ic	1V @ 300mA, 1.5A
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 300mA, 5V
Power - Max	30 W
Frequency - Transition	18MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Supplier Device Package	TO-126-3

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