PBSS5230QAZ Details_PBSS5230QAZ Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	30 V
Vce Saturation (Max) @ Ib, Ic	210mV @ 50mA, 1A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 2A, 2V
Power - Max	325 mW
Frequency - Transition	170MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-XDFN Exposed Pad
Supplier Device Package	DFN1010D-3

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