BFN38E6327HTSA1 Details_BFN38E6327HTSA1 Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	200 mA
Voltage - Collector Emitter Breakdown (Max)	300 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 30mA, 10V
Power - Max	1.5 W
Frequency - Transition	70MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	PG-SOT223-4

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