NTE16001 Details_NTE16001 Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Current - Collector (Ic) (Max)	50 mA
Voltage - Collector Emitter Breakdown (Max)	35 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 10mA, 10V
Power - Max	600 mW
Frequency - Transition	500MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	3-SIP
Supplier Device Package	3-SIP

Other

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