NTE2323 Details_NTE2323 Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	200 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 30mA, 10V
Power - Max	750 mW
Frequency - Transition	80MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	14-DIP (0.300", 7.62mm)
Supplier Device Package	14-PDIP

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