NTE396 Details_NTE396 Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	350 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 4mA, 50mA
Current - Collector Cutoff (Max)	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 20mA, 10V
Power - Max	1 W
Frequency - Transition	15MHz
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39

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