NTE306 Details_NTE306 Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Current - Collector (Ic) (Max)	1.5 A
Voltage - Collector Emitter Breakdown (Max)	50 V
Vce Saturation (Max) @ Ib, Ic	300mV @ 50mA, 1A
Current - Collector Cutoff (Max)	200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	98 @ 100mA, 2V
Power - Max	950 mW
Frequency - Transition	-
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-202 Long Tab
Supplier Device Package	TO-202

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