MJ11012G Details_MJ11012G Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	30 A
Voltage - Collector Emitter Breakdown (Max)	60 V
Vce Saturation (Max) @ Ib, Ic	4V @ 300mA, 30A
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 20A, 5V
Power - Max	200 W
Frequency - Transition	4MHz
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-204AA, TO-3
Supplier Device Package	TO-204 (TO-3)

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