NTE101 Details_NTE101 Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Current - Collector (Ic) (Max)	300 mA
Voltage - Collector Emitter Breakdown (Max)	25 V
Vce Saturation (Max) @ Ib, Ic	200mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	6µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 10mA, 1V
Power - Max	150 mW
Frequency - Transition	-
Operating Temperature	85°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AA, TO-5-3 Metal Can
Supplier Device Package	TO-5

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