2SA1162GT1 Details_2SA1162GT1 Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	150 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Power - Max	200 mW
Frequency - Transition	80MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SC-59

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