PDTD113EQAZ Details_PDTD113EQAZ Related parameters PDF

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Bulk
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	1 kOhms
Resistor - Emitter Base (R2)	1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	210 MHz
Power - Max	325 mW
Mounting Type	Surface Mount
Package / Case	3-XDFN Exposed Pad
Supplier Device Package	DFN1010D-3

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