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MOSFETs - Arrays
SI4967DY-T1-GE3 Picture

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SI4967DY-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET 2P-CH 12V 8SOIC
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In Stock:18,152(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)
FET Type
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
23mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Other
Price advantage, SI4967DY-T1-GE3 is available in stock and can be delivered on the same day
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