SSM6N15AFE,LM Details_SSM6N15AFE,LM Related parameters PDF_Toshiba Semiconductor and Storage-Winwic

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	100mA
Rds On (Max) @ Id, Vgs	4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id	1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	13.5pF @ 3V
Power - Max	150mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6 (1.6x1.6)

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