RM2020ES9 Details_RM2020ES9 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	750mA (Ta), 800mA (Ta)
Rds On (Max) @ Id, Vgs	1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA, 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.8pC @ 10V, 750pC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	87pF @ 10V, 120pF @ 16V
Power - Max	150mW (Ta), 800mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SOT-363

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