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MOSFETs - Arrays
FF6MR12W2M1B11BOMA1 Picture

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FF6MR12W2M1B11BOMA1

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In Stock:2,220(Ref. price)
Qty.Unit PriceExt. Price
1
$317.25541
$317.25541
Documents
Specifications
DescriptionDetails
Series
CoolSiC™+
Package
Tray
FET Type
2 N-Channel (Dual)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V
Current - Continuous Drain (Id) @ 25°C
200A (Tj)
Rds On (Max) @ Id, Vgs
5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id
5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
14700pF @ 800V
Power - Max
20mW (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-EASY2BM-2
Other
Price advantage, FF6MR12W2M1B11BOMA1 is available in stock and can be delivered on the same day
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