CAB011M12FM3 Details_CAB011M12FM3 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tray
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	105A
Rds On (Max) @ Id, Vgs	14mOhm @ 100A, 15V
Vgs(th) (Max) @ Id	3.6V @ 35mA
Gate Charge (Qg) (Max) @ Vgs	324nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	800V
Power - Max	10mW
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	-

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