SQ4532AEY-T1_GE3 Details_SQ4532AEY-T1_GE3 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	Automotive, AEC-Q101, TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	7.3A (Tc), 5.3A (Tc)
Rds On (Max) @ Id, Vgs	31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.8nC @ 10V, 10.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	535pF @ 15V, 528pF @ 15V
Power - Max	3.3W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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