RM3075S8(N) Details_RM3075S8(N) Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6.8A (Ta), 4.6A (Ta)
Rds On (Max) @ Id, Vgs	27mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id	2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V, 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	383pF @ 15V
Power - Max	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP

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