CAB530M12BM3 Details_CAB530M12BM3 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tray
FET Type	2 N-Channel
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	530mA
Rds On (Max) @ Id, Vgs	3.55mOhm @ 530A, 15V
Vgs(th) (Max) @ Id	3.6V @ 140mA
Gate Charge (Qg) (Max) @ Vgs	1362nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds	39.6nF @ 800V
Power - Max	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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