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MOSFETs - Arrays
SI7964DP-T1-E3 Picture

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SI7964DP-T1-E3

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In Stock:20,634(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
2 N-Channel (Dual)
FET Feature
Standard
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
6.1A
Rds On (Max) @ Id, Vgs
23mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.4W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Supplier Device Package
PowerPAK® SO-8 Dual
Other
Price advantage, SI7964DP-T1-E3 is available in stock and can be delivered on the same day
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