BSC750N10NDGATMA1 Details_BSC750N10NDGATMA1 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	OptiMOS™
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	3.2A
Rds On (Max) @ Id, Vgs	75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	720pF @ 50V
Power - Max	26W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Supplier Device Package	PG-TDSON-8-4

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