SIA910EDJ-T1-GE3 Details_SIA910EDJ-T1-GE3 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	4.5A
Rds On (Max) @ Id, Vgs	28mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	455pF @ 6V
Power - Max	7.8W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Supplier Device Package	PowerPAK® SC-70-6 Dual

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