PHN203,518 Details_PHN203,518 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchMOS™
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6.3A
Rds On (Max) @ Id, Vgs	30mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	14.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	560pF @ 20V
Power - Max	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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