SI7980DP-T1-E3 Details_SI7980DP-T1-E3 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Half Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	8A
Rds On (Max) @ Id, Vgs	22mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1010pF @ 10V
Power - Max	19.8W, 21.9W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Supplier Device Package	PowerPAK® SO-8 Dual

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