SIZ998DT-T1-GE3 Details_SIZ998DT-T1-GE3 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual), Schottky
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs	6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.1nC @ 4.5V, 19.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	930pF @ 15V, 2620pF @ 15V
Power - Max	20.2W, 32.9W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-PowerPair®

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