SQJ264EP-T1_GE3 Details_SQJ264EP-T1_GE3 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	Automotive, AEC-Q101, TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Standard
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	20A (Tc), 54A (Tc)
Rds On (Max) @ Id, Vgs	20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V, 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 25V, 2100pF @ 25V
Power - Max	27W (Tc), 48W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Supplier Device Package	PowerPAK® SO-8 Dual Asymmetric

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