SIZF916DT-T1-GE3 Details_SIZF916DT-T1-GE3 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs	4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V, 95nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1060pF @ 15V, 4320pF @ 15V
Power - Max	3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-PowerPair® (6x5)

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