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NE3516S02-A Picture

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NE3516S02-A

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  • IC HJ-FET RF N-CH S02 4-MICROX
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Specifications
DescriptionDetails
Series
-
Package
Bulk
Transistor Type
N-Channel GaAs HJ-FET
Frequency
12GHz
Gain
14dB
Voltage - Test
2 V
Current Rating (Amps)
60mA
Noise Figure
0.35dB
Current - Test
10 mA
Power - Output
165mW
Voltage - Rated
4 V
Package / Case
4-SMD, Flat Leads
Supplier Device Package
S02
Other
Price advantage, NE3516S02-A is available in stock and can be delivered on the same day
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