PD20010S-E Details_PD20010S-E Related parameters PDF

MOSFETs - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,082(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	LDMOS
Frequency	2GHz
Gain	11dB
Voltage - Test	13.6 V
Current Rating (Amps)	5A
Noise Figure	-
Current - Test	150 mA
Power - Output	10W
Voltage - Rated	40 V
Package / Case	PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Supplier Device Package	PowerSO-10RF (Straight Lead)

Other

Price advantage, PD20010S-E is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
AFT05MS031GNR1	NXP USA Inc.	MOSFETs - RF	Datasheet	FET RF 40V 520MHZ TO270-2G	$18.80976	In Stock:19148
BLF8G20LS-200V,112	Ampleon USA Inc.	MOSFETs - RF	Datasheet	RF FET LDMOS 65V 17DB SOT1120B	$66.36740	In Stock:2330
MMRF1308HSR5	NXP USA Inc.	MOSFETs - RF	Datasheet	FET RF 2CH 133V 230MHZ	No price	In Stock:19154
BLC10G20LS-240PWTY	Ampleon USA Inc.	MOSFETs - RF	Datasheet	RF MOSFET LDMOS 28V SOT1275-3	$65.96640	In Stock:19156
CLF1G0035-200PU	Ampleon USA Inc.	MOSFETs - RF	Datasheet	RF FET 50V 11DB SOT1228A	$457.19701	In Stock:19158