SSM3J351R,LXHF Details_SSM3J351R,LXHF Related parameters PDF_Toshiba Semiconductor and Storage-Winwic

MOSFETs - Single

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Specifications

Description	Details
Series	Automotive, AEC-Q101, U-MOSVI
Package	Tape & Reel (TR)Cut Tape (CT)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	134mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15.1 nC @ 10 V
Vgs (Max)	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds	660 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	SOT-23F
Package / Case	SOT-23-3 Flat Leads

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