IXTN550N055T2 Details_IXTN550N055T2 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	GigaMOS™, TrenchT2™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	550A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	595 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	40000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	940W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC

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