NTMYS1D2N04CLTWG Details_NTMYS1D2N04CLTWG Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	44A (Ta), 258A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs	109 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6330 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	3.9W (Ta), 134W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK4 (5x6)
Package / Case	SOT-1023, 4-LFPAK

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