IXTP3N100P Details_IXTP3N100P Related parameters PDF

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：20,452(Ref. price)

Qty.	Unit Price	Ext. Price
1	$2.50421	$2.50421

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	PolarVHV™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

Other

Price advantage, IXTP3N100P is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
FQB8N60CTM	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 7.5A D2PAK	$2.03700	In Stock:2888
SI7491DP-T1-E3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET P-CH 30V 11A PPAK SO-8	No price	In Stock:19234
IXTA10P50P	IXYS	MOSFETs - Single	Datasheet	MOSFET P-CH 500V 10A TO263	$5.69280	In Stock:3828
IRFZ46NPBF	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 55V 53A TO220AB	$1.03550	In Stock:5335
TPH1R204PB,L1Q	Toshiba Semiconductor and Storage	MOSFETs - Single	Datasheet	MOSFET N-CH 40V 150A 8SOP	$1.45530	In Stock:17961