PMZB370UNE,315 Details_PMZB370UNE,315 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	490mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.16 nC @ 15 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	78 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	360mW (Ta), 2.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1006B-3
Package / Case	3-XFDFN

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