RQA0004PXDQS#H1 Details_RQA0004PXDQS#H1 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	16 V
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	900mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	10 pF @ 0 V
FET Feature	-
Power Dissipation (Max)	3W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	UPAK
Package / Case	TO-243AA

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