BSS806NEH6327XTSA1 Details_BSS806NEH6327XTSA1 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	Automotive, AEC-Q101, HEXFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 2.5V
Rds On (Max) @ Id, Vgs	57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id	0.75V @ 11µA
Gate Charge (Qg) (Max) @ Vgs	1.7 nC @ 2.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	529 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3

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