IRF7703TR Details_IRF7703TR Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	28mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5220 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSSOP
Package / Case	8-TSSOP (0.173", 4.40mm Width)

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