C3M0120065J Details_C3M0120065J Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	C3M™
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	157mOhm @ 6.76A, 15V
Vgs(th) (Max) @ Id	3.6V @ 1.86mA
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 15 V
Vgs (Max)	+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds	640 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	86W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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