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MOSFETs - Single
HUFA75617D3S Picture

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HUFA75617D3S

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In Stock:20,494(Ref. price)
Qty.Unit PriceExt. Price
1
$0.54150
$0.54150
Documents
Specifications
DescriptionDetails
Series
UltraFET™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
90mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
570 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
64W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Other
Price advantage, HUFA75617D3S is available in stock and can be delivered on the same day
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