C3M0120090J Details_C3M0120090J Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	C3M™
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id	3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs	17.3 nC @ 15 V
Vgs (Max)	+18V, -8V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 600 V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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